Let us consider the stored 1 state again

Let us consider the stored 1 state again, as shown in Fig. 1. For
the RHBD 10T memory cell, according to SEU physical mechanism,
nodes Q, QN, and S0 are three sensitive nodes for this stored value.
1) If the sensitive node Q is flipped to state 0 by a charged particle,
transistor N1 will be temporarily OFF, and the switch state of
transistor P6 will be ON temporarily. However, the voltage of
node S1 will be its initial state, because the size of transistor
P1 is larger than that of transistor P6 (2.1× larger). As a result,
the voltage of node S0 is unchanged. Hence, transistor P4 will
be always ON. Finally, the voltage of node Q will be flipped
to the initial voltage.
2) If the sensitive node S0 is induced to change the initial state
by a radiation particle, both transistors P1 and P4 will be
temporarily turned OFF, and the nodes Q, QN, and S1 will be
unchanged due to capacitive effect. Therefore, transistor P5 will
be always ON, and the voltage of node S0 will be restored.
3) When node QN is flipped, the switch states of transistors
N2 and P5 will be temporarily turned ON and OFF, respectively,
and then the voltage of node Q will be changed to 0 state.
Hence, transistors P6 and N1 will be also temporarily turned
ON and OFF, respectively. However, due to the larger size of
transistor P1, the value of node S1 will be its initial value so that
transistor P2 also remains its OFF state. Therefore, the affected
node Q will be pulled up to 1 state, and then transistor N1 will
be turned ON again, and node QN will be pulled down to 0 state.