devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes

devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolarpn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.

Hokyun Rho, Min Park et al 3 report the preparation of continuous carbon nanotube (CNT)–Cu composite fibers thatpossess Cu nanofibrillar structures with a high current carrying capacity. Various-shaped CNT–Cu microfibers withdifferent Cu grain morphologies were produced via Cu electroplating on continuous CNT fibers. Cu fibril structureswere embedded in the voids inside the CNT fiber during the early stage of electrodeposition. The temperaturedependentand magnetic field-dependent electrical properties and the ampacity of the produced CNT–Cu microfiberswere measured, and the failure mechanism of the fiber was discussed. The interconnection of Cu nanograins on thesurface of the individual CNTs contributed to the enhancement in the charge-carrying ability of the fiber. The effectiveampacity of the Cu nanofibrils was estimated to be ~1 × 107 A/cm2, which is approximately 50 times larger than theampacity measured for a bulk Cu microwire.